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Investigation of the inhibiting outdiffusion of erbium atoms to a silicon-on-insulator surface after annealing at high temperature

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【Author】 Qin Xi-Feng a)c),Li Hong-Zhen b),Li Shuang a),Ji Zi-Wu c),Wang Hui-Ning c),Wang Feng-Xiang a),and Fu Gang a) a)College of Science,Shandong Jianzhu University,Jinan 250101,China b)College of Physics and Engineering,Qufu Normal University,Qufu 273165,China c)School of Physics and State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China

【机构】 College of Science,Shandong Jianzhu University； School of Physics and State Key Laboratory of Crystal Materials,Shandong University； College of Physics and Engineering,Qufu Normal University；

【摘要】 The annealing behaviour of 400 keV Er ions at a fluence of 2×1015 cm-2 implanted into silicon-on-insulator(SOI) samples is investigated by Rutherford backscattering spectrometry of 2.1 MeV He2+ ions with a multiple scattering model.It is found that the damage close to the SOI surface is almost removed after being annealed in O2 and N2 atmospheres,successively,at ℃,and that only a small number of the Er atoms segregated to the surface of the SOI sample,whereas a large number of Er atoms diffused to a deeper position because of the affinity of Er for oxygen.For the SOI sample co-implanted with Er and O ions,there is no evident outdiffusion of Er atoms to the SOI surface after being annealed in N2 atmosphere at ℃.更多还原

【Abstract】 The annealing behaviour of 400 keV Er ions at a fluence of 2×1015 cm-2 implanted into silicon-on-insulator(SOI) samples is investigated by Rutherford backscattering spectrometry of 2.1 MeV He2+ ions with a multiple scattering model.It is found that the damage close to the SOI surface is almost removed after being annealed in O2 and N2 atmospheres,successively,at ℃,and that only a small number of the Er atoms segregated to the surface of the SOI sample,whereas a large number of Er atoms diffused to a deeper position because of the affinity of Er for oxygen.For the SOI sample co-implanted with Er and O ions,there is no evident outdiffusion of Er atoms to the SOI surface after being annealed in N2 atmosphere at ℃.更多还原

【关键词】 Er ion implantation； silicon-on-insulator； annealing behavior； Rutherford backscattering technique；
【Key words】 Er ion implantation； silicon-on-insulator； annealing behavior； Rutherford backscattering technique；

【基金】 Project supported by the Natural Science Foundation of Shandong Province,China (Grant Nos. ZR2011AM011 andZR2009FM031);the National Natural Science Foundation of China (Grant No. 11005070);the Science and Technology Item of Shandong Provincial Housing and Urban-Rural Construction Department,China (Grant No. 2011YK033)

【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2012年06期

【分类号】O472.1
【下载频次】27

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