【摘要】 为解决硅微压传感器制作过程中存在的问题,以SOI晶圆材料为基础,使用有限元方法优化设计岛-膜型1kPa压力敏感结构,采用MEMS工艺完成传感器芯片制作,并对封装后的传感器进行了测试。测试结果表明,传感器输出灵敏度大于60 mV/kPa,非线性小于0.1%FS,精度小于0.5%FS,器件具有较好的性能指标。更多还原

【Abstract】 Considering the production process problem for silicon low pressure sensors,1 kPa pressure sensing chip with the island-diaphragm structure was designed with FET method.And SOI wafers were applied to fabricate the pressure sensor chip with MEMS process.The packaged sensors were measured.The results show that the output sensitivity is greater than 60 mV/kPa,nonlinearity is less than 0.1% FS,the accuracy is less than 0.5% FS,the fabricated silicon low sensor has good performance.更多还原