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p型晶体硅异质结太阳电池光电特性模拟研究

SIMULATION OF HETEROJUNCTION SOLAR CELLS BASED ON p-TYPE SILICON WAFER

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【作者】 程雪梅孟凡英汪建强李祥黄建华

【Author】 Cheng Xuemei1,Meng Fanying1,Wang Jiangqiang1,Li Xiang2,Huang Jianhua2(1.Solar Energy Institute,Physics Department of Shanghai Jiao Tong University,Shanghai 200240,China; 2.Shanghai R&D Center,Hanwha SolarOne Co.,Ltd,Shanghai 200240,China)

【机构】 上海交通大学物理系太阳能研究所江苏林洋新能源有限公司上海研发中心

【摘要】 利用AFORS-HET软件模拟以p型晶体硅为衬底的异质结太阳电池的特性。太阳电池的基本结构为:TCO/n-a-Si∶H/i-a-Si∶H/p-c-Si/Ag,通过改变电池材料的特征参量,分析电池输出特性随相关参量变化的规律。结果表明,与ITO相比,以ZnO为透明导电极的电池在短波光和可见光波段光谱响应更强,短路电流密度和电池效率更高。此外,在所建立的电池模型中,限定掺杂型非晶硅层的厚度为10nm,改变本征非晶硅层厚度,模拟研究找到了电池的短路电流、开路电压、填充因子及光电转换效率随本征层厚度变化的规律和最优值,通过模拟研究发现有背场的双面电池比无背场电池的开路电压增加4.8%,最高转换效率达21.25%。

【Abstract】 The performance of heterojunction solar cells was investigated in p-type silicon crystalline by using AFORS-HET.From the simulation results,it is found that comparing with using ITO as TCO,the absorption of solar cell with ZnO as its TCO is much stronger in visible light,and the short current(Jsc) is bigger than the former,so the efficiency(Eff) increase.After inserting a thin intrinsic amorphous silicon(a-Si) between the n a-Si and c-Si,the short current and the fill factor both increased rapidly,and the Eff raised.However,the thickness of the intrinsic layer must be strict controlled within 0.1-1.0nm in this model.The bifacial heterojunction solar cells with the structure ZnO(80nm)/a-Si n(10nm)/a-Si i(1nm)/c-Si p(0.3cm)/a-Si i(1nm)/a-Si p+(10nm) was simulated,and the best performance of Eff is 21.25%.

【基金】 上海市-应用材料国际科技合作基金(08520741400);教育部留学回国人员科研启动基金
  • 【文献出处】 太阳能学报 ,Acta Energiae Solaris Sinica , 编辑部邮箱 ,2012年09期
  • 【分类号】TM914.4
  • 【被引频次】9
  • 【下载频次】313
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