【摘要】 设计了808 nm高功率GaAsP/InGaAlP/GaAs半导体激光器,采用无铝张应变量子阱和非对称宽波导结构,通过优化金属有机物气相沉积(LP-MOCVD)生长条件,提高了外延材料的生长质量,有效提升了激光器转化效率和输出功率。制作了200μm条宽、1500μm腔长的激光器器件,室温连续条件(CW)测试其阈值电流为650 mA,斜率效率高达到1.35 W/A,输出功率在11 W以上,激射波长808.5 nm@5A,水平和垂直发散角分别为8°和30°,较小的发散角有效的提高了输出光功率密度。更多还原

【Abstract】 High power 808 nm GaAsP/InGa(Al)P/GaAs semiconductor laser diode(LD) with Al-free tensile strained quantum well was designed.In order to improve the LDs’ conversion efficiency and output power,asymmetric broad-area structure was introduced.The material quality was improved by optimizing the growth parameters for low pressure-MOCVD(LP-MOCVD).For the devices with 200 μm-wide stripe and 1500 μm-long cavity under continuous wave(CW) operation condition,the typical threshold current is 650 mA,the slope efficiency is 1.35 W/A,and the maximum output power reaches higher than 11 W.The lasing wavelength is 808.5 nm @5A and the far field profile(FFP) is tested with 8° of parallel and 30° of vertical direction.It was found that the output power density was effectively increased by this small divergence angle.更多还原