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InAlO₃（ZnO）₁₅超晶格纳米串的合成及其电学性质

Synthesis and Transport Properties of InAlO₃（ZnO）₁₅ Superlattice Nanobunches

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【Author】 CHEN Ting-ting,WANG Guang-ning,HUANG Dong-liang,LANG Ying,ZHANG E(School of Physics and Electronic Engineering,Harbin Normal University,Heilongjiang Key Laboratory for Low-Dimensional System and Mesoscopic Physics,Harbin 150025,China)(Received 30 August 2011,accepted 24 September 2011)

【机构】哈尔滨师范大学物理与电子工程学院低维体系与介观物理黑龙江省高校重点实验室；

【摘要】通过化学气相沉积方法成功合成了InAlO3(ZnO)15超晶格纳米串。扫描电镜观察到InAlO3(ZnO)15纳米片沿生长方向均匀排列,直径约为80～150 nm,长度约为7～20μm。X射线衍射结果表明样品具有InAlO3(ZnO)15超晶格纳米结构。高分辨透射电子显微镜显示相邻两个In-O层中间共16层In(Al)O(ZnO)m+block,并研究了其生长机制。在0.6～3 V电压范围内,I-V特性曲线出现非线性性质。更多还原

【Abstract】 InAlO3(ZnO)15 superlattice nanobunches were successfully synthesized by a simple chemical vapor deposition method.Scanning electron microscopy observations showed that InAlO3(ZnO)15 superlattice platelets regularly arrayed along the direction of growth.Their diameter and length were 80-150 nm and 7-20 μm,respectively.XRD data confirm that nanobunches have wurtzite InAlO3(ZnO)15 superlattice structure.The HRTEM image shows a better periodical superlattice structure with exactly 16 In(Al)O(ZnO)+m block between the two adjacent In-O layers.A possible growth mechanism has been discussed and a nonlinear I-V characteristic is found in a voltage span of 0.6-3 V.更多还原