【摘要】 利用一种定制设计的诱导耦合等离子体辅助射频(RF)磁控溅射沉积技术,在玻璃衬底上制备了N掺杂的P型氧化锌(ZnO∶N)薄膜体系,并使用了反应Ar+N2混合气体烧结的ZnO靶材.在不同技术条件下制备了不同表面平整度的薄膜体系,并利用扫描隧道显微技术(SEM)和X射线衍射仪(XRD)来分析样品表面,发现了ZnO薄膜颗粒化结晶沿着(002)晶向纵向柱型结构生长.实验结果表明,P型ZnO薄膜的成功制备归因于生长过程中的高密度诱导耦合等离子体源的高分离性和有效的等离子体—表面相互作用机制.更多还原

【Abstract】 By using a custom-designed inductively coupled plasma assisted radio-frequency magnetron sputtering deposition technique to fabricate N-doped P-type ZnO(ZnO∶ N) thin films on the glass substrate,and the ZnO target is sintered in a reactive Ar+N2 gas mixture.Under different fabrication conditions,the authors obtain some film structures with the different surface smoothness.By X-ray diffraction and scanning electron microscopy analyses,they also find that the N films of ZnO show a hexagonal crystal structure with a preferential(002) crystallographic orientation and grow as vertical columnar structures.The results show that the achievement of p-type N thin film ZnO is attributed to the high dissociation ability of the high-density inductively coupled plasma source and effective plasma-surface interactions during the growth process.更多还原