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KLu(WO42 crystal as the Raman medium in a diode-pumped passively Q-switched Nd:YAG laser

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【作者】 徐慧华张行愚王青圃丛振华王聪王伟涛李雷刘兆军陈晓寒范书振贺建立张怀金

【Author】 XU Hui-hua1 , ZHANG Xing-yu1, WANG Qing-pu1 , CONG Zhen-hua1 , WANG Cong1 , WANG Wei-tao 1 , LI Lei1 , LIU Zhao-jun1 , CHEN Xiao-han1 , FAN Shu-zhen1 , HE Jian-li1 , and ZHANG Huai-jin2 1. Key Laboratory on Laser Technology and Application of Shandong Province, School of Information Science and Engineering, Shandong University, Jinan 250100, China 2. State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

【机构】 Key Laboratory on Laser Technology and Application of Shandong Province, School of Information Science and Engineering, Shandong UniversityState Key Laboratory of Crystal Materials, Shandong University

【摘要】 A diode-pumped passively Q-switched Nd:YAG/KLu(WO 4 ) 2 (KLW) Raman laser is presented for the first time. As high as 1.89 W average output power is obtained at the pump power of 15.7 W with the pulse repetition frequency (PRF) of 27.2 kHz, and the corresponding diode-to-Stokes conversion efficiency is 12.0%. The highest pulse energy of 84.0 μJ is obtained. The obtained average output power and pulse energy are much higher than the previously reported results of diode-pumped passively Q-switched Raman lasers.

【Abstract】 A diode-pumped passively Q-switched Nd:YAG/KLu(WO 4 ) 2 (KLW) Raman laser is presented for the first time. As high as 1.89 W average output power is obtained at the pump power of 15.7 W with the pulse repetition frequency (PRF) of 27.2 kHz, and the corresponding diode-to-Stokes conversion efficiency is 12.0%. The highest pulse energy of 84.0 μJ is obtained. The obtained average output power and pulse energy are much higher than the previously reported results of diode-pumped passively Q-switched Raman lasers.

【关键词】 pumpedswitchedrepetitionmirrorresonatorcooledabsorberStokesstabilizationconcave
【基金】 supported by the National Natural Science Foundation of China (No.11174185);the Natural Science Foundation of Shandong Province (No.2009ZRB019OE);the Research Fund for the Doctoral Program of Higher Education of China (No.20100131110064);the Science and Technology Development Program of Jinan in Shandong Province (No.200906009)
  • 【文献出处】 Optoelectronics Letters ,光电子快报(英文版) , 编辑部邮箱 ,2012年05期
  • 【分类号】TN248
  • 【被引频次】3
  • 【下载频次】54
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