【摘要】 为了研究静电放电对半导体桥(SCB)起爆装置的作用机理,根据静电作用的特点,对SCB起爆装置进行静电放电实验,建立了电容放电的电-热分析模型,利用有限元分析软件AN-SYS对静电作用过程的温度场进行模拟仿真。扫描电镜观测和X射线能谱分析可知,半导体桥的尖角处电流密度最大,温度最高;静电通过焦耳热效应作用于SCB起爆装置,使得桥的尖角区域最先汽化损伤。研究结果可为SCB起爆装置的抗静电危害设计提供参考。更多还原

【Abstract】 In order to study the effect mechanism of the electrostatic discharge(ESD)on semiconductor bridge(SCB)explosive devices,the SCB explosive devices are tested in the ESD experiment according to the electrostatic characteristics,and the electro-thermal analysis model of the capacitor discharge is established.The ANSYS software is used to simulate the temperature field of SCB under the electrostatic discharge.The results of the scanning electron microscope and energy dispersive X-ray show that the current density of V-type angles is maximum and the temperature is the highest.The SCB is affected by Joule heating,and the sharp corners of the bridge are vapoured and damaged firstly.The results can provide references for the anti-electrostatic design of SCB explosive devices.更多还原