【摘要】 利用分子束外延(MBE)技术,以5N的ZnCl2作为掺杂源,在半绝缘GaAs(001)衬底上异质外延生长ZnSe∶Cl单晶薄膜。研究发现,掺入ZnCl2后,ZnSe外延层的结晶质量和表面形貌与本征ZnSe外延层相比变差,双晶X射线摇摆曲线(DCXRC)的ZnSe(004)衍射峰半峰宽(FWHM)从432arcsec增大到529arcsec,表面均方根粗糙度(RMS)从3.00nm增大到3.70nm。当ZnCl2掺杂源炉的温度为170℃时,ZnSe样品的载流子浓度达到1.238×1019 cm-3,可以满足结型器件制作和隧道结材料设计的要求。更多还原

【Abstract】 N-type ZnSe layers grown on GaAs(001) substrates by molecular beam epitaxy using ZnCl2(5N) as doping material were studied.It was found that the crystalline quality and surface morphology of ZnSe layers deteriorated with increasing ZnCl2 cell temperature.The full-width at half-maximum(FWHM) of double-crystal X-ray rocking curve(DCXRC) for ZnSe(004) reflection rose from 432 arcsec to 529 arcsec,and surface RMS roughness also increased from 3.00 nm to 3.70 nm.Carrier concentration of ZnSe samples reached 1.238×1019cm-3 when ZnCl2 cell temperature was 170 ℃,which met the requirement of materials for fabricating junction devices or tunnel junction material engineering.更多还原