【摘要】 描述了用6 ns波长为1 064 nm的激光在SF6中作用于硅表面产生的锥形微观结构过程,测试了经激光处理及未经激光处理之硅晶片制成的硅电池光电转换效率的变化。实验显示,激光处理后的晶片所制电池其光电转换效率提高,其增加量为未经激光处理的电池效率的10%~15%,对这种变化进行了初步机理分析,认为可能与硅逾量电子结合能和Fermi能级有关。激光处理硅晶片的应用,也会进一步改善硅电池制作工艺。更多还原

【Abstract】 The conical microstructures formed on the surface of Si-wafer in SF6 and upon irradiation with train of 6 ns laser pulses with a wavelength of 1 064 nm was described.The Si cell optoelectric conversion efficiency of the sample which is laser treatment(sample 1) and without laser treatment(sample 2) compared with sample 1 were measured,the conversion efficiency of sample 2 increased up to 10%-15%.Primary analysis the mechanism of the changes,it possible relates to binding energy of surfeit electron and Fermi level.Find application of the Si-wafer laser treatment the Si cell technology can further improve.更多还原