【摘要】 研究了非晶态碲镉汞(x=0.2)薄膜的暗电导率随温度变化关系,发现非晶态结构的碲镉汞材料具有明显的半导体特性,其室温禁带宽度在0.88～0.91eV之间,与通过光学方法获得的结果相符。在80～240K的温度区间非晶态碲镉汞(x=0.2)的暗电导率从1×10—8Ω—1.cm—1缓慢增大到5×10-8Ω—1.cm—1,温度大于240K时,其电导率剧烈增大到1×10—5Ω—1.cm—1,说明在240K附近非晶态碲镉汞材料的导电机制发生了变化,这对非晶态碲镉汞材料的应用研究具有重要意义。还研究了退火过程对非晶态碲镉汞薄膜电导率的影响,结果表明140℃退火后非晶态碲镉汞薄膜发生了部分晶化。更多还原

【Abstract】 Experimental results on the temperature dependence of the conductivity and the spectrum of the absorption coefficient of amorphous Hg0.8Cd0.2Te are reported.Amorphous Hg0.8Cd0.2Te is found to be a semiconductor with a 0.88-0.91 eV band gap.Conductivity of amorphous Hg0.8Cd0.2Te increase slowly from 1×10—8 W—1·cm—1 to 5×10-8 W—1·cm—1 in the temperature range of 80 K to 240 K,increase drastically from 5×10-8 W—1·cm—1 to 1×10—5 W—1·cm—1 when temperature higher than 240 K,it is indicated that the conduction occurs by different mechanism.The influence of a 140℃ anneal on conductivity and absorption edge of amorphous Hg0.8Cd0.2Te films is studied.更多还原