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TiO2/VO2双层薄膜的制备及光电性能研究
Preparation of TiO2/VO2 bilayer thin film and its photoelectric properties
【摘要】 文章采用磁控溅射法在玻璃基底上分别制备VO2单层薄膜与TiO2/VO2双层薄膜,并在Ar气中进行退火。用X射线衍射仪、扫描电镜、紫外-可见光分光光度计、LCR测试仪对薄膜样品的晶体结构、表面形貌、可见光透过率、电阻-温度特性进行测试。结果表明,TiO2/VO2双层薄膜的相变温度降低到56℃,电阻温度系数为-1.087/℃,可见光透过率提高了20%～30%,且薄膜生长致密均匀。
【Abstract】 The VO2 monolayer thin film and TiO2/VO2 bilayer thin film were prepared by magnetron sputtering on glass substrates,and then annealed in Ar atmosphere.Their crystal structures,surface morphologies,visible light transmittances and resistance-temperature characteristics were measured by X-ray diffraction,scanning electron microscope,UV-visible spectrophotometer and LCR tester.The results show that compared with VO2 monolayer thin film,the phase transition temperature of TiO2/VO2 bilayer thin film decreases to 56 ℃ and its temperature coefficient of resistance is-1.087/℃.TiO2/VO2 bilayer thin film becomes more denser and smoother and its visible light transmittance increases 20%-30%.
【Key words】 TiO2/VO2 bilayer thin film； phase transition temperature； resistance-temperature curve； visible light transmittance；
- 【文献出处】 合肥工业大学学报(自然科学版) ,Journal of Hefei University of Technology(Natural Science) , 编辑部邮箱 ,2012年12期
- 【分类号】TB383.2
- 【被引频次】3
- 【下载频次】128