【摘要】 采用磁控溅射技术制备了N掺杂SiC薄膜,利用X线衍射仪、傅里叶红外光谱仪、物理特性测试系统对薄膜成分、结构、磁性进行了表征.结果表明,N掺杂SiC薄膜具有室温铁磁性,N掺杂含量对薄膜的室温铁磁性具有很大的影响,薄膜室温铁磁性可能是由于N替代C来控制Si空位缺陷的电荷态和自旋极化产生的.更多还原

【Abstract】 The N doped SiC films were prepared by magnetron sputtering technique.The microstructures and ferromagnetism of the films were characterized with X-ray diffraction,fourier transform infrared spectrometer and physical property measurement system.Room temperature ferromagnetism was observed in the N doped SiC films.The result indicates that N content in the film has a great effect on the observed room temperature ferromagnetism of the film.Charge states and spin polarizations of silicon vacancy defects can be manipulated by N atoms which induces the ferromagnetism.更多还原