【摘要】 研究了双层堆垛InAs/GaAs/InAs自组织量子点的生长和光致发光(PL)的物理性质。通过优化InAs淀积量、中间GaAs层厚度以及InAs量子点生长温度等生长条件,获得了室温光致发光1391～1438nm的高质量InAs量子点。研究发现对量子点GaAs间隔层实施原位退火、采用Sb辅助生长InGaAs盖层等方法可以增强高密度(2×1010 cm-2)InAs量子点的发光强度,减小光谱线宽,改善均匀性和红移发光波长。更多还原

【Abstract】 The molecular beam epitaxy growth and physical property of photoluminescence(PL) of two layer stacked InAs/GaAs quantum dots have been investigated.The emission wavelengths of the InAs quantum dots(QD) are extended to 1391~1438 nm through optimizations of growth conditions including InAs deposition amounts,thicknesses of GaAs space layers and growth temperatures.It is found that the PL intensities,wavelengths,line widths and uniformities of the high density(2×1010 cm-2) InAs QD are improved by using in-situ annealing of GaAs interval layers and Sb assisted growth of InGaAs cover layers.更多还原