【摘要】 利用原子力显微镜(AFM)探针直写技术制备了短沟道并五苯有机场效应晶体管(OFET),并研究了器件性能。在SiO2/n+-Si基底上,利用AFM探针刻蚀金沟道,通过优化工艺参数,获得的沟道长约1μm,器件的场效应迁移率为0.038cm2.V-1.S-1,开关比为103,输出电流最高可达200μA。结果表明,器件性能强烈依赖于沟道长度,随着沟道长度减小,输出电流显著增加。更多还原

【Abstract】 In this paper,we present atomic force microscope(AFM) lithography for fabricating short-channel organic field-effect transistors(OFETs).The Au gap is obtained by direct material scratching on SiO2/n+-Si substrate,resulting in a channel length of about 1 μm.By using pentacene as the semiconductor material,the field-effect mobility and the on/off ratio are 0.038 cm2·V-1·S-1 and 103,respectively,and the output current achieves as high as 200 μA.The electrical characteristics of the organic field-effect transistors strongly depend on the channel length.Moreover,the source-drain current is significantly improved by reducing the channel length.更多还原