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CuInSe2薄膜太阳能电池非真空印刷制备技术研究

Study on the non-vacuum printing technology for the fabrication of CuInSe2 thin film solar cell

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【作者】 周芳芳陈勤妙朱子诚倪一李振庆窦晓鸣庄松林

【Author】 ZHOU Fang-fang1,CHEN Qin-miao1,2,ZHU Zi-cheng1,NI Yi1,LI Zhen-qing1,2, DOU Xiao-ming1,2,3,ZHUANG Song-lin1(1.Shanghai Key Laboratory of Modern Optical System,Engineering Research Center of Optical Instrument and System,Education Ministry of China,School of Optics-Electrical and Computer Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China;2.Department of Physics,Shanghai Jiaotong University,Shanghai 200240,China;3.Consolidated Research Institute for Advanced Science and Medical Care,Waseda University,Tokyo 162-0041,Japan)

【机构】 上海理工大学光电信息与计算机工程学院教育部光学仪器与系统工程研究中心上海市现代光学系统重点实验室上海交通大学物理系日本早稻田大学先端科学研究机构

【摘要】 对CuInSe2(CISe)薄膜太阳能电池的吸收层进行了非真空印刷制备技术研究。使用机械化学法合成CISe前驱粉末,采用ethyl-cellulose作为分散试剂配置印刷浆,使用丝网印刷技术沉淀CISe吸收层,对沉淀的吸收层进行N2氛围的快速热退火处理,使用XRD、UV、SEM及J-V等手段对CISe吸收层进行了分析表征。结果表明:简单高效的机械化学法可获得主(112)晶向CISe前驱粉末;经丝网印刷并干燥后的CISe吸收层中含有大量有机分散剂,退火可蒸发有机分散剂并有效改善CISe结晶度,但过长的退火会增加晶体缺陷;实验制得一典型CISe薄膜太阳能电池的短路电流密度、开路电压、填充因子和转换效率分别为4.48mA/cm2、355mV、0.41和0.65%。

【Abstract】 The non-vacuum printing technology is studied for the fabrication of CuInSe2(CISe) thin film solar cell.CISe precursor powder,synthesized by the mechanochemical method,is dispersed by ethyl-cellulose to prepare screen-printing paste.The CISe paste is deposited on substrate by the screen-printing technology to form the CISe absorber layer.The printed CISe absorber layers are annealed in N2 ambience by rapid thermal annealing process at various conditions and characterized by XRD,UV,SEM and J-V.It is found that:CISe precursor powder with preferred(112) orientation can be obtained by the mechanochemical method;Screen-printed CISe absorber layer contains lots of organic dispersion agent ethyl-cellulose;High-temperature annealing process can remove most of the ethyl-cellulose and effectively improve the crystallinity of CISe,whereas overlong annealing also introduces defects to the CISe;The short-circuit current density,open-circuit voltage,fill factor and conversion efficiency of a typical CISe solar cell are 4.48 mA/cm2,355 mV,0.41 and 0.65%,respectively.

【基金】 上海市科委科技基金(10540500700);上海市重点学科第3期(S30502)资助项目
  • 【文献出处】 光电子.激光 ,Journal of Optoelectronics.Laser , 编辑部邮箱 ,2012年10期
  • 【分类号】TM914.4
  • 【被引频次】1
  • 【下载频次】162
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