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N₂O Plasma表面处理对SiN_x基IGZO-TFT性能的影响

Effect of N₂O Plasma Treatment on The SiN_x-based InGaZnO Thin Film Transistors

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【Author】 LI Jun1,2*,ZHOU Fan1,LIN Hua-ping1,ZHANG Hao2, ZHANG Jian-hua2,JIANG Xue-yin1,ZHANG Zhi-lin2 (1.School of Materials Science and Engineering,Shanghai University,Shanghai 200072,China; 2.Key Laboratory of Advanced Display and System Application,EMC,Shanghai University,Shanghai 200072,China)

【机构】上海大学材料科学与工程学院；上海大学新型显示技术与应用集成教育部重点实验室；

【摘要】采用N2O plasma处理SiNx薄膜作为绝缘层,以室温下沉积的铟镓锌氧化物(IGZO)作为有源层制备了IGZO薄膜晶体管。与常规的IGZO-TFT相比,N2O plasma处理过的IGZO-TFT的迁移率由原来的4.5 cm2.V-1.s-1增加至8.1 cm2.V-1.s-1,阈值电压由原来的11.5 V减小至3.2 V,亚阈值摆由原来的1.25 V/decade减小至0.9V/decade。采用C-V方法计算了两种器件的陷阱态,结果发现N2O plasma处理过的IGZO-TFT的陷阱态明显小于普通的IGZO-TFT的陷阱态,表明N2O plasma处理SiNx绝缘层是一种改善IGZO-TFT器件性能的有效方法。更多还原

【Abstract】 Indium-gallium-zinc oxide thin film transistor(IGZO-TFT) was fabricated using N2O plasma treated SiNx film as gate insulator and room-temperature deposited IGZO film as active layer.Comparing with the conventional IGZO-TFT,the saturation mobility increased from 4.5 to 8.1 cm2·V-1·s-1,threshold voltage reduced from 11.5 to 3.2 V,threshold swing varied from 1.25 to 0.9 V/dec.The trap states in the N2O plasma treated IGZO-TFT is obviously smaller than that in the conventional IGZO-TFT.Our results indicate that using N2O plasma treated SiNx film as gate insulator is an effective approach for improving IGZO-TFT performance.更多还原