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添加Bi4Ti3O12对BST陶瓷性能的影响

Effects of adding Bi4Ti3O12 on properties of BST ceramics

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【作者】 黄新友李言高春华林榕黄瑞南

【Author】 HUANG Xinyou1,LI Yan2,GAO Chunhua1,LIN Rong2,HUANG Ruinan2(1.School of Materials Science and Engineering,Jiangsu University,Zhenjiang 212013,Jiangsu Province,China;2.Shantou High-New Zone Songtian Enterprise Co.,Ltd,Shantou 515041,Guangdong Province,China)

【机构】 江苏大学材料科学与工程学院汕头高新区松田实业有限公司

【摘要】 采用固相法制备了添加Bi4Ti3O12(BIT)的(Ba0.71Sr0.29)TiO3(BST)陶瓷,研究了BIT的加入量对所制BST陶瓷的微观结构和介电性能的影响。结果表明:随着BIT添加量的增加,BST陶瓷的晶粒尺寸先减小后增大,相对介电常数(εr)逐渐减小,介质损耗(tanδ)先减小后增大。当添加质量分数26%的BIT于1 120℃烧结,制得的BST陶瓷综合性能较好:εr为1 700,tanδ为0.006,容温特性符合X7R的要求,耐直流电压强度为5.0×103V/mm。

【Abstract】 Bi4Ti3O12(BIT) added(Ba0.71Sr0.29)TiO3(BST) ceramics were prepared by solid state method.Effects of BIT adding amount on the dielectric properties and microstructure of prepared BST ceramics were investigated.The results show that the crystal grain size decreases first and then increases,the relative permittivity(εr) decreases,the dielectric loss(tanδ) decreases first and then increases when BIT adding amount incerases.The BST ceramics prepared with mass fraction of 26% of BIT and sintered at 1 120 ℃ possess good comprehensive properties: εr of 1 700,tanδ of 0.006.The capacitance temperature property of the BST ceramics is suited for X7R,and the DC withstand voltage strength is 5.0×103 V/mm.

【基金】 江苏省科技支撑计划资助项目(No.BE2008029);广东省教育部产学研结合项目资助(No.2011B090400027)
  • 【文献出处】 电子元件与材料 ,Electronic Components and Materials , 编辑部邮箱 ,2012年05期
  • 【分类号】TQ174.1
  • 【被引频次】4
  • 【下载频次】86
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