【摘要】 研究通过提高发射区的方块电阻和采用合适的工艺技术,制备了性能优良的单晶硅太阳电池。采用丝网印刷技术制备了40Ω/□常规发射区和60Ω/□高方块电阻发射区单晶硅太阳电池并对其性能进行了分析研究。扩展电阻法分析表明:60Ω/□发射区的表面活性磷杂质浓度和结深比40Ω/□发射区的分别降低了12.8%和14.9%。尽管60Ω/□发射区太阳电池的串联电阻增加了0.141Ω/cm2导致填充因子下降了1.24%,但是短路电流密度和开路电压分别提高了1.31 mA/cm2和1.2 mV,最终转换效率仍然提高了0.4%。更多还原

【Abstract】 The high quality mono-crystalline silicon solar cells were achieved by increasing the sheet-resistance of the emitters and using the favorable technology processing.The mono-crystalline silicon solar cells with 40 Ω/□ and 60 Ω/□ emitters were fabricated with screen-printed contacts and their properties were studied.The spreading resistance profiles analysis shows that there is a 12.8% decrease in the surface active phosphorus concentration and a 14.9% decrease in the junction depth for mono-crystalline silicon solar cells with 60 Ω/□ emitter compared with the conventional solar cells with 40 Ω/□ emitter.The mono-crystalline silicon solar cells with 60 Ω/□ emitter demonstrate an improvement of 1.31 mA/cm2 in short current density,1.2 mV in open-circuit voltage,and thus 0.4% higher in energy conversion efficiency,in spite of a 1.24% loss in fill factor resulted from a 0.141 Ω/cm2 increase in series resistance compared with the conventional solar cells with 40 Ω/□ emitter.更多还原