【摘要】 介绍了近年来半导体脉冲功率开关的发展和应用情况,具体包括反向开关晶体管(RSD)、半导体断路歼关(SOS)、脉冲晶闸管、功率MOSFET、绝缘栅双极型晶体管(IGBT)和SiC-JFET。描述了专门用于脉冲功率领域的RSD和SOS开关的结构和工作原理,报道了国内外在脉冲晶闸管方面的工程研究及达到的参数,介绍了基于常见电力电子开关功率MOSFET和IGBT制成的脉冲功率装置,并简介了基于宽禁带半导体材料SiC制成的JFET器件的高温封装技术。更多还原

【Abstract】 The development and application of semiconductor pulsed power switches in recent years are introduced.It contains reversely switched diode(RSD),semiconductor opening switch(SOS),pulse thyristor,power MOSFET,IGBT and SiC-JFET.The structure and operating principle of the RSD and SOS that are especially applied in the pulsed power area are described.The engineering research and the parameters for the pulse thyristor at home and abroad are reported.The pulsed power assemblies based on the normal power electronic switches power MOSFET and IGBT are introduced.In addition,the high temperature package technology of the JFET device based on the wide bandgap semiconductor material SiC is introduced briefly.更多还原