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MoO₃源漏电极缓冲层对有机薄膜晶体管性能的影响

Effect of MoO₃ Buffer Layer on the Performance of Organic Thin Film Transistor

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【Author】 XU Jie,LI Qing,LIN Hui,and WANG Hong(School of Optoelectronic Information,University of Electronic Science and Technology of China;State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China Chengdu 610054)

【机构】电子科技大学光电信息学院；电子科技大学电子薄膜与集成器件国家重点实验室；

【摘要】以并五苯(pentacene)作为有机薄膜晶体管(OTFTs)的载流子传输层,采用比常用金电极(Au)廉价的Ag作为源漏电极,在pentacene与Ag之间添加MoO3超薄层作为缓冲层,制备了具有较高场效应迁移率()的晶体管器件。结果表明,器件在栅极电压VG为40 V时,传输电流IDS超过了50 A,空穴迁移率达到0.26 cm2/Vs。同时,从器件的输出特性与物理机制分析了MoO3缓冲层在器件中的作用。更多还原

【Abstract】 High field effect mobility() organic thin film transistor(OTFT) was fabricated by using MoO3 buffer layer between organic semiconductor(pentacene) and source/drain electrodes(Ag).The hole mobility of OTFT reached 0.26 cm2/Vs and output current IDSachieved more than 50 A when the gate voltage was 40 V.The detailed effect of MoO3buffer layer was analyzed via output characteristics and physical mechanism.更多还原