【摘要】 利用Silvaco软件模拟全耗尽SOI n沟道MOSFET器件的自加热效应。在温度300～500K、栅偏压2～10V范围内研究了该器件的ID-VD特性和器件的温度分布规律。在低温和高栅偏压时,SOI结构中自加热效应明显。此现象归因于低温和高栅偏压时,SOI n-MOSFET中的漏电流密度大,热载流子使晶格升温迅速。更多还原

【Abstract】 In this paper,the self-heating effects in the fully depleted enhancement SOI n-MOSFET are investigated over a temperature range from 300 to 500K and a gate voltage range of 2-10V.The drain current-drain voltage characteristics(ID-VD) have been studied extensively.It has been noted that the self-heating effects reduced at a higher temperature and lower gate biases.The present study is important for the design and application of SOI devices.更多还原