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LaAlO₃顶层对Pb（Zr,Ti）O₃薄膜微结构和性能的影响

Effect of LaAlO₃ Cap Layer on Microstructure and Properties of Pb（Zr,Ti）O₃ Films

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【Author】 HAO Lanzhong1,2,LIU Yunjie1,ZHU Jun2,ZHANG Ying2(1 College of Physics Science and Technology,Chinese University of Petroleum,Dongying 257061;2 State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronics Science and Technology of China,Chengdu 610054)

【机构】中国石油大学(华东)物理科学与技术学院；电子科技大学电子薄膜与集成器件国家重点实验室；

【摘要】利用脉冲激光沉积(PLD)法,在LaAlO3(LAO)基片上外延生长了高质量的PbZr0.52Ti0.48O3(PZT)薄膜。通过增加10nm厚的LAO顶层,所制备PZT薄膜的铁电剩余极化(Pr)由28.8μC/cm2增加为55.1μC/cm2。通过对微结构分析,表明薄膜电学性能的增强主要来源于LAO顶层对PZT薄膜表面形貌的优化。另外,与Pr不同,随LAO顶层厚度的增加,PZT薄膜的矫顽场单调增加。更多还原

【Abstract】 PbZr0.52Ti0.48O3 films(PZT) were grown epitaxially on LaAlO3(LAO) substrates using pulse laser deposition.When 10-nm-thick LAO cap layer was used,the remnant polarization(Pr) of the PZT film increased from 28.8μC/cm2 to 55.1μC/cm2.This could be attributed to the improvement of the surface morphology of the PZT film by the introduction of LAO cap layer.In addition,the thickness of PZT film increased with the increase of the thickness of LAO cap layer,which was different with Pr.更多还原