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ZnO nanowire network transistors based on a self-assembly method

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【Author】 Dai Zhenqing~2,Chen Changxin~1,Zhang Yaozhong Wei Liangming~1,Zhang Jing~1,Xu Dong~1,and Zhang Yafei 1 Key Laboratory for Thin Film and Microfabrication of the Ministry of Education,Research Institute of Micro/Nano Science and Technology,Shanghai Jiao Tong University,Shanghai 200240,China 2 Department of Physics and Chemistry,Hebei Normal University of Science and Technology,Qinhuangdao 066004,China

【机构】 Key Laboratory for Thin Film and Microfabrication of the Ministry of Education,Research Institute of Micro/Nano Science and Technology,Shanghai Jiao Tong University； Department of Physics and Chemistry,Hebei Normal University of Science and Technology；

【摘要】 <正>Dense,uniform ZnO nanowire（NW） networks are prepared by using a simple and sufficient selfassembly method.In this method,ZnO NWs are modified with aminopropyltriethoxysilane（APTES） to form positively charged amine-terminated surfaces.The modified ZnO NWs are adsorbed on negatively charged SiO₂/Si substrates to form ZnO NW networks by the electrostatic interaction in an aqueous solution.Field-effect transistors （FETs） are fabricated and studied based on the ZnO NW networks.For a typical device with an NW density of 2.8μm^-2,it exhibits a current on/off ratio of 2.4×10⁵,a transconductance of 336 nS,and a field-effect mobility of 27.4 cm²/（V·s）.更多还原

【Abstract】 Dense,uniform ZnO nanowire（NW） networks are prepared by using a simple and sufficient selfassembly method.In this method,ZnO NWs are modified with aminopropyltriethoxysilane（APTES） to form positively charged amine-terminated surfaces.The modified ZnO NWs are adsorbed on negatively charged SiO₂/Si substrates to form ZnO NW networks by the electrostatic interaction in an aqueous solution.Field-effect transistors （FETs） are fabricated and studied based on the ZnO NW networks.For a typical device with an NW density of 2.8μm^-2,it exhibits a current on/off ratio of 2.4×10⁵,a transconductance of 336 nS,and a field-effect mobility of 27.4 cm²/（V·s）.更多还原

【关键词】 self-assembly method； ZnO nanowire networks； field-effect transistors；
【Key words】 self-assembly method； ZnO nanowire networks； field-effect transistors；

【基金】 Project supported by the National Science Foundation of China(Nos.50730008,60807008);the Doctoral Fund of Hebei Normal University of Science and Technology(No.2009YB007)

【文献出处】半导体学报 ,Journal of Semiconductors , 编辑部邮箱 ,2012年08期

【分类号】TN321.5
【被引频次】1
【下载频次】62

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