节点文献
Influence of surface preparation on atomic layer deposition of Pt films
【摘要】 <正>We report Pt deposition on a Si substrate by means of atomic layer deposition(ALD) using(methylcyclopentadienyl) trimethylplatinum(CH3C5H4Pt(CH3)3) and O2.Silicon substrates with both HF-last and oxidelast surface treatments are employed to investigate the influence of surface preparation on Pt-ALD.A significantly longer incubation time and less homogeneity are observed for Pt growth on the HF-last substrate compared to the oxide-last substrate.An interfacial oxide layer at the Pt-Si interface is found inevitable even with HF treatment of the Si substrate immediately prior to ALD processing.A plausible explanation to the observed difference of Pt-ALD is discussed.
【Abstract】 We report Pt deposition on a Si substrate by means of atomic layer deposition(ALD) using(methylcyclopentadienyl) trimethylplatinum(CH3C5H4Pt(CH3)3) and O2.Silicon substrates with both HF-last and oxidelast surface treatments are employed to investigate the influence of surface preparation on Pt-ALD.A significantly longer incubation time and less homogeneity are observed for Pt growth on the HF-last substrate compared to the oxide-last substrate.An interfacial oxide layer at the Pt-Si interface is found inevitable even with HF treatment of the Si substrate immediately prior to ALD processing.A plausible explanation to the observed difference of Pt-ALD is discussed.
【Key words】 Pt; atomic layer deposition; surface treatment; interfacial oxide layer;
- 【文献出处】 半导体学报 ,Journal of Semiconductors , 编辑部邮箱 ,2012年08期
- 【分类号】TN304.055
- 【下载频次】28