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Influence of surface preparation on atomic layer deposition of Pt films

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【作者】 葛亮； 胡成； 朱志炜； 张卫； 吴东平； 张世理；

【Author】 Ge Liang,Hu Cheng~1,Zhu Zhiwei~1,Zhang Wei Wu Dongping,and Zhang Shili 1 State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University,Shanghai 200433,China 2 Solid-State Electronics,the Angstrom Laboratory,Uppsala University,Box 534,75121 Uppsala,Sweden

【机构】 State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University； State Key Laboratory of ASIC and System,School of Microclectronics,Fudan University； Solid-State Electronics,the Angstrom Laboratory,Uppsala University；

【摘要】 <正>We report Pt deposition on a Si substrate by means of atomic layer deposition（ALD） using（methylcyclopentadienyl） trimethylplatinum（CH3C5H4Pt（CH3）3） and O2.Silicon substrates with both HF-last and oxidelast surface treatments are employed to investigate the influence of surface preparation on Pt-ALD.A significantly longer incubation time and less homogeneity are observed for Pt growth on the HF-last substrate compared to the oxide-last substrate.An interfacial oxide layer at the Pt-Si interface is found inevitable even with HF treatment of the Si substrate immediately prior to ALD processing.A plausible explanation to the observed difference of Pt-ALD is discussed.

【Abstract】 We report Pt deposition on a Si substrate by means of atomic layer deposition（ALD） using（methylcyclopentadienyl） trimethylplatinum（CH3C5H4Pt（CH3）3） and O2.Silicon substrates with both HF-last and oxidelast surface treatments are employed to investigate the influence of surface preparation on Pt-ALD.A significantly longer incubation time and less homogeneity are observed for Pt growth on the HF-last substrate compared to the oxide-last substrate.An interfacial oxide layer at the Pt-Si interface is found inevitable even with HF treatment of the Si substrate immediately prior to ALD processing.A plausible explanation to the observed difference of Pt-ALD is discussed.

【关键词】 Pt； atomic layer deposition； surface treatment； interfacial oxide layer；
【Key words】 Pt； atomic layer deposition； surface treatment； interfacial oxide layer；
【基金】 Project supported by the National S&T Major Project 02(No.2009ZX02035-003);the National Natural Science Foundation of China(No. 61176090);the Program for Professor of Special Appointment(Eastern Scholar) at Shanghai Institutions of Higher Learning
  • 【文献出处】 半导体学报 ,Journal of Semiconductors , 编辑部邮箱 ,2012年08期
  • 【分类号】TN304.055
  • 【下载频次】28
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