【摘要】 应用离子注入工艺可制备获得线性电流大、窗口死层薄的硅pin辐射探测器。首先简要介绍了离子注入工艺形成pn结的原理,重点根据技术要求进行了离子注入工艺设计和计算,分别得到了注入能量为40 keV和注入剂量为4×1014/cm2的两个重要控制参数。同时分析了在离子注入工艺中存在的影响因素和相应处理方法,对生产具有良好的指导作用。采用所设计的工艺参数制备获得的硅pin辐射探测器各项技术指标均满足要求,验证了离子注入工艺设计与参数控制的有效性。更多还原

【Abstract】 The ion implantation can be used for the fabrication of silicon pin radiation detectors with thin sensitive window and large linear current.The principle of the pn junction formed by the ion implantation was introduced briefly.According to the technical requirements,the ion implantation process was designed and calculated.And the two important control parameters,the implantation energy of 40 keV and the implantation dose of 4×1014/cm2,were obtained respectively.Meanwhile,the influence factors and corresponding methods were analyzed,which gives a good guide for the production.The silicon pin radiation detector was fabricated using the designed process parameters.And the each technical index could meet the requirement.The validities of the process design and parameter control for ion implantation were verified.更多还原