【摘要】 介绍了目前国际上主流的薄膜体声波谐振器(FBAR)技术,分析了FBAR谐振器的结构设计和压电薄膜选取方案。依托Si基半导体工艺平台,采用牺牲层技术完成了空气腔的制作,利用磁控反应溅射技术制备的高质量(002)AlN薄膜作为压电材料,基于FBAR多层立体结构,实现了空气腔型FBAR谐振器的制作工艺,实际制作了FBAR谐振器样品。实测FBAR谐振器样品典型指标:Q值≥300,谐振频率为1.46 GHz,谐振频率覆盖L波段。测试结果验证了设计方案及工艺路径的正确性与可行性,为后续产品的研发提供了技术基础。更多还原

【Abstract】 The international mainstream film bulk acoustic resonator(FBAR) technology was introduced.The design of FBAR structure and the piezoelectric film selection scheme were analyzed.Relied on silicon-based semiconductor technology platform,the air cavity was obtained by the methodology of sacrifice layer.The high quality AlN thin film with(002)oriented as a piezoelectric material was achieved by magnetron reactive sputtering.Based on the FBAR three-dimensional multi-layer structure,the production process of the air cavity type FBAR resonator was realized,and the actual FBAR samples was made.The typical test results show a Q-Factor larger than 300 and a resonance frequency of 1.46 GHz.It shows that the design scheme and process technology is correct and feasible,and the technology provides technical foundation for the development of the follow-up product,更多还原