【摘要】 研究了低温缓冲层对在GaAs(001)衬底上用分子束外延(MBE)生长ZnTe薄膜晶体质量的影响。发现插入低温缓冲层后ZnTe的结晶质量、表面形貌和发光质量都得到了显著的提高,双晶X射线摇摆曲线(DCXRC)的ZnTe(004)衍射峰半峰宽(FWHM)从529 arcsec减小到421 arcsec,表面均方根(RMS)粗糙度从6.05 nm下降到3.93 nm。而作为对比,插入高温缓冲层并不能对ZnTe薄膜的质量起到改善作用。基本上实现了优化工艺的目标并为研制ZnTe基光电器件微结构材料奠定了很好的实验基础。更多还原

【Abstract】 The effects of ZnTe thin films grown on GaAs(001)substrates with low-temperature buffer layers by molecular beam epitaxy(MBE)were analyzed.It has a lot of improvement to crystalline quality,surface morphology and luminous quality of the ZnTe thin films after using low-temperature buffer layers.The full-width at half-maximum(FWHM) of double-crystal X-ray rocking curve(DCXRD)for ZnTe(004)reflection decreases from 529 arcsec(without buffer layers)to 421 arcsec(with low temperature buffer layers),and the root-mean-square(RMS)roughness diminishes from 6.05 nm to 3.93 nm.However,high crystal quality ZnTe heteroepitaxy cannot be achieved by inserting a thin buffer layer at high temperature.Optimization of ZnTe growth on GaAs(001)by MBE was basically achieved,and a good experimental foundation is laid for microstructure materials of ZnTe based optoelectronic devices.更多还原