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CIS薄膜太阳能电池吸收层用高纯CuInSe₂块体材料的制备

Preparation of High Purity CuInSe₂ Alloy for CIS Thin Film Applied in Solar Cell Absorption Layer

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【Author】 Huang Xiaoke1,Wu Xiangwu2,Xie Yuanfeng3 (1.Liuzhou Bai Ren Te Advanced Material Liability Company,Liuzhou 545006,China;2.Guangxi Indium Industrial Association,Liuzhou 545006,China;3.General Research Institute for Non-Ferrous Metals,Beijing 100088,China)

【机构】柳州百韧特先进材料有限公司；广西铟锡锑工程技术研究中心；北京有色金属研究总院粉末冶金及特种材料研究所；

【摘要】以Cu,In,Se为原料制备了高纯CuInSe2块体材料。分别采用熔盐净化-电解-区域熔炼工艺和真空蒸馏-区域熔炼联合工艺对原料In,Se进行提纯,可获得纯度99.9999%In和99.9995%Se。采用多室真空梯度合成工艺,制备出纯度大于99.999%的CuSe、In2Se3中间化合物。将其破碎混匀后压制烧结,合成出的块体材料成分均匀、纯度大于99.999%。XRD分析表明,块体相结构为CuInSe2相。更多还原

【Abstract】 High purity CuInSe2 material was prepared.Purification process including molten salt refining-electrolysis refining-zone purification and vacuum distillation-zone purification was used to eliminate impurities from raw material In and Se,and In with purity of 99.9999% and Se with purity of 99.9995% were obtained respectively.Intermediate compounds consisted of single phase CuSe and In2Se3 structure,with both purities higher than 99.999% were synthesized by multi-chamber vacuum grads fabrication process.Breaking,milling the intermediate compounds properly,pressing and sintering at proper parameters,then uniform CuInSe2 with purity up to 99.999% was prepared.The alloy mainly consisted of single CuInSe2 phase,analyzing by XRD testing.更多还原