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后栅型场发射显示器窜压现象的研究

Voltage Interference of Under-Gate Filed Emission Display

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【作者】 吴朝兴; 胡利勤; 苏艺菁; 李昱; 郭太良;

【Author】 Wu Chaoxing,Hu Liqin,Su Yijing,Li Yu,Guo Tailiang(College of Physics and Information Engineering,Fuzhou University,Fuzhou 350002,China)

【机构】 福州大学物理与信息工程学院;

【摘要】 提出后栅型场发射显示器(FED)测试过程中的窜压现象,解释该现象的产生原因。阴极电极侧壁场发射电子轰击栅极导致电压表示数发生变化。针对此问题设计一种具有沟槽状介质层结构的后栅型FED从而避免阴极电极侧壁的电子发射。采用全印刷技术制作场发射显示阵列。实验表明此器件具有良好的发射稳定性及栅压调控特性,有效杜绝窜压现象的发生。阳极电压为600 V,栅极电压在100~250 V范围内对阳极电流有良好的调控作用。

【Abstract】 Here,we address the technical problems and possible solutions of the voltage interference and charge accumulation in the under-gate field emission display(FED),fabricated with single-wall carbon nano-tube film emitters.The electron emission from the cathode sides was found to result in electron bombardment of the gate and a charge accumulation on its surface.A novel type of under-gate FED with a groove insulating layer(GIL) was designed to effectively eliminate the possibility of the side electron emission,and to enhance emission current.The emission characteristics of the prototyped under-gate FED with GIL structures fabricated in screen-printing technique,were evaluated.The results show that the voltage interference and charge accumulation were completely removed,and that the newly-developed FED shows good emission stability and gate modulation at a gate voltage ranging from 100 V to 250 V and an anode voltage of 600 V.

【基金】 国家863计划重大专项(2008AA03A313);福建省科技重大专项专题(2004HZ01-2);福建省教育厅资助项目(NO.J09003);福建省自然科学基金资助项目(No.2009J05145)
  • 【文献出处】 真空科学与技术学报 ,Chinese Journal of Vacuum Science and Technology , 编辑部邮箱 ,2011年01期
  • 【分类号】TN873
  • 【被引频次】1
  • 【下载频次】70
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