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Sb掺杂ZnO薄膜的缺陷和光学性质研究

Effect of Sb-doping on the structure and optical properties of ZnO films

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【作者】 陈小庆孙利杰傅竹西

【Author】 CHEN Xiaoqing,SUN Lijie,FU Zhuxi(Department of Physics,University of Science and Technology of China,Hefei 230026,China)

【机构】 中国科学技术大学物理系

【摘要】 采用磁控溅射方法在6H-SiC单晶片上制备了锑(Sb)掺杂的氧化锌(ZnO)薄膜.利用X射线衍射(XRD)和X射线光电子能谱(XPS)对样品的结晶质量和成分进行了测试.结果表明所得到的ZnO∶Sb薄膜结晶质量良好,掺Sb浓度为原子数分数1%,并且掺入的Sb原子处于Zn原子的位置.利用低温及变温光致发光谱(PL)研究了ZnO∶Sb薄膜的光学性质,观察到了与Sb有关的A0X发射,并且计算得到其受主能级为150meV.分析认为掺Sb的ZnO薄膜中受主来源于SbZn-2VZn复合缺陷.

【Abstract】 Antimony-doped ZnO thin films was deposited on 6H-SiC substrates by RF magetron sputtering.X-ray diffraction showed that the films have high crystalline quality.X-ray photoelectron spectroscopy showed that Sb has been doped into ZnO films,and that the Sb concentration(atom percent) is about 1%.It was also verified that Sb occupies the Zn site but not the O site.Low temperature photoluminescence was carried out to investigate the optical properties of ZnO:Sb films and the A0X related to Sb dopant were observed.The corresponding acceptor energy level is about 150 meV by our calculations.Based on the analysis,SbZn-2VZn complex is the main source of acceptor of ZnO:Sb films.

【关键词】 Sb掺杂低温PL谱ZnOA0X
【Key words】 antimony-dopedlow temperature photoluminescenceZnOA0X
【基金】 国家自然科学基金重点项目(50532070);中国科学院三期创新方向性课题(KJCX3.5YW.W01)资助
  • 【文献出处】 中国科学技术大学学报 ,Journal of University of Science and Technology of China , 编辑部邮箱 ,2011年01期
  • 【分类号】O484.41
  • 【被引频次】2
  • 【下载频次】265
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