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Enhanced etching of silicon didioxide guided by carbon nanotubes in HF solution

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【Author】 Zhao Hua-Bo a) , Ying Alex Yi-Qun a) , Yan Feng a) , Wei Qin-Qin c) , Fu Yun-Yi c) , Zhang Yan b) , Li Yan b) , Wei Zi-Jun c) , and Zhang Zhao-Hui a) a) State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China b) Key Laboratory for Physics and Chemistry of Nanodevices, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China c) Department of Microelectronics, Peking University, Beijing 100871, China

【机构】 State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University； Department of Microelectronics, Peking University； Key Laboratory for Physics and Chemistry of Nanodevices, College of Chemistry and Molecular Engineering, Peking University；

【摘要】 This paper describes a new method to create nanoscale SiO 2 pits or channels using single-walled carbon nanotubes (SWNTs) in an HF solution at room temperature within a few seconds. Using aligned SWNT arrays, a pattern of nanoscale SiO 2 channels can be prepared. The nanoscale SiO 2 patterns can also be created on the surface of three- dimensional (3D) SiO 2 substrate and even the nanoscale trenches can be constructed with arbitrary shapes. A possible mechanism for this enhanced etching of SiO 2 has been qualitatively analysed using defects in SWNTs, combined with H 3 O + electric double layers around SWNTs in an HF solution.更多还原

【Abstract】 This paper describes a new method to create nanoscale SiO 2 pits or channels using single-walled carbon nanotubes (SWNTs) in an HF solution at room temperature within a few seconds. Using aligned SWNT arrays, a pattern of nanoscale SiO 2 channels can be prepared. The nanoscale SiO 2 patterns can also be created on the surface of three- dimensional (3D) SiO 2 substrate and even the nanoscale trenches can be constructed with arbitrary shapes. A possible mechanism for this enhanced etching of SiO 2 has been qualitatively analysed using defects in SWNTs, combined with H 3 O + electric double layers around SWNTs in an HF solution.更多还原

【关键词】 carbon nanotube； silicon dioxide； HF wet etching； defects and electric double layers；
【Key words】 carbon nanotube； silicon dioxide； HF wet etching； defects and electric double layers；

【基金】 supported by the National Natural Science Foundation of China (Grant Nos. 90406007, 61076069, 60776053, and 10434010);the National Basic Research Program of China (Grant No. 2007CB936800)

【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2011年10期

【分类号】TN305.7
【下载频次】30

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