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Simulation of the light extraction efficiency of nanostructure light-emitting diodes

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【Author】 Zhu Ji-Hong a),Wang Liang-Ji a),Zhang Shu-Ming a),Wang Hui a),Zhao De-Gang a),Zhu Jian-Jun a),Liu Zong-Shun a),Jiang De-Sheng a),and Yang Hui a)b) a) State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductor,Chinese Academy of Sciences,Beijing 100083,China b) Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou 215123,China

【机构】 State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductor,Chinese Academy of Sciences； Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences；

【摘要】 The light extraction efficiencies have been calculated for various InGaN/GaN multiple quantum well nanostructure light-emitting diodes including nanopillar,nanorough of P-GaN surface,coreshell and nano-interlayer structure.From the calculated results we can see that the light extraction efficiency is remarkably improved in the nanostructures,especially those with an InGaN or AlGaN nano-interlayer.With a 420-nm luminescence wavelength,the light extraction efficiency can reach as high as 65% for the InGaN or AlGaN nano-interlayer structure with appropriate In or Al content while only 26% for the planar structure.更多还原

【Abstract】 The light extraction efficiencies have been calculated for various InGaN/GaN multiple quantum well nanostructure light-emitting diodes including nanopillar,nanorough of P-GaN surface,coreshell and nano-interlayer structure.From the calculated results we can see that the light extraction efficiency is remarkably improved in the nanostructures,especially those with an InGaN or AlGaN nano-interlayer.With a 420-nm luminescence wavelength,the light extraction efficiency can reach as high as 65% for the InGaN or AlGaN nano-interlayer structure with appropriate In or Al content while only 26% for the planar structure.更多还原

【关键词】 light extraction efficiency； InGaN/GaN multiple quantum well； nanostructure；
【Key words】 light extraction efficiency； InGaN/GaN multiple quantum well； nanostructure；

【基金】 Project supported by the National Science Fund for Distinguished Young Scholars of China (Grant No.60925017);the National Natural Science Foundation of China (Grant Nos.10990100 and 60836003);the National Basic Research Program of China (Grant No.2007CB936700);the National High Technology Research and Development Program of China (Grant No.2007AA03Z401);the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No.ISCAS2009T05O9S4050000)

【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2011年07期

【分类号】TN312.8
【被引频次】2
【下载频次】29

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