节点文献

Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition

  • 推荐 CAJ下载
  • PDF下载
  • 不支持迅雷等下载工具,请取消加速工具后下载。

【作者】 李海鸥黄伟邓泽华邓小芳刘纪美

【Author】 Li Hai-Ou a)c) , Huang Wei b), Tang Chak Wah c), Deng Xiao-Fang a), and Lau Kei May c) a)Information and Communication College, Guilin University of Electronic Technology, Guilin 541004, China b)The 58th Research Institute, China Electronics Technology Group Corporation, Wuxi 214061, China c)Department of Electronics and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, China

【机构】 Information and Communication College, Guilin University of Electronic TechnologyDepartment of Electronics and Computer Engineering, Hong Kong University of Science and TechnologyThe 58th Research Institute, China Electronics Technology Group Corporation

【摘要】 The fabrication and performance of 160-nm gate-length metamorphic AlInAs/GaInAs high electron mobility tran-sistors (mHEMTs) grown on GaAs substrate by metal organic chemical vapour deposition (MOCVD) are reported. By using a novel combined optical and e-beam photolithography technology, submicron mHEMTs devices have been achieved. The devices exhibit good DC and RF performance. The maximum current density was 817 mA/mm and the maximum transconductance was 828 mS/mm. The non-alloyed Ohmic contact resistance Rc was as low as 0.02 Ω- mm. The unity current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) were 146 GHz and 189 GHz, respectively. This device has the highest fT yet reported for a 160-nm gate-length HEMTs grown by MOCVD. The output conductance is 28.9 mS/mm, which results in a large voltage gain of 28.6. Also, an input capacitance to gate-drain feedback capacitance ratio, Cgs/Cgd, of 4.3 is obtained in the device.

【Abstract】 The fabrication and performance of 160-nm gate-length metamorphic AlInAs/GaInAs high electron mobility tran-sistors (mHEMTs) grown on GaAs substrate by metal organic chemical vapour deposition (MOCVD) are reported. By using a novel combined optical and e-beam photolithography technology, submicron mHEMTs devices have been achieved. The devices exhibit good DC and RF performance. The maximum current density was 817 mA/mm and the maximum transconductance was 828 mS/mm. The non-alloyed Ohmic contact resistance Rc was as low as 0.02 Ω- mm. The unity current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) were 146 GHz and 189 GHz, respectively. This device has the highest fT yet reported for a 160-nm gate-length HEMTs grown by MOCVD. The output conductance is 28.9 mS/mm, which results in a large voltage gain of 28.6. Also, an input capacitance to gate-drain feedback capacitance ratio, Cgs/Cgd, of 4.3 is obtained in the device.

【基金】 Project supported by CERG Grant (615506) from the Research Grants Council of Hong Kong Special Administrative Region of China and Intel Corporation;Science and Technology Plan of the Education Bureau of Guangxi Zhuang Autonomous Region of China (Grant No. 200911MS93)
  • 【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2011年06期
  • 【分类号】TN304.055
  • 【被引频次】2
  • 【下载频次】34
节点文献中: 

本文链接的文献网络图示:

本文的引文网络