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Electronic structure of twinned ZnS nanowires

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【作者】 李登峰李柏林肖海燕董会宁

【Author】 Li Deng-Feng a) , Li Bo-Lin a), Xiao Hai-Yan b), and Dong Hui-Ning a) a)Department of Mathematics and Physics, Chongqing University of Posts and Telecommunications, Chongqing 400065, China b)Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054, China

【机构】 Department of Mathematics and Physics, Chongqing University of Posts and TelecommunicationsDepartment of Applied Physics, University of Electronic Science and Technology of China

【摘要】 The electronic properties of twinned ZnS nanowires (NWs) with different diameters were investigated based on first-principles calculations. The energy band structures, projected density of states and the spatial distributions of the bottom of conduction band and the top of the valence band were presented. The results show that the twinned nanowires exhibit a semiconducting character and the band gap decreases with increasing nanowire diameter due to quantum confinement effects. The valence band maximum and conduction band minimum originate mainly from the S-p and Zn-s orbitals at the core of the nanowires, respectively, which was confirmed by their spatial charge density distribution. We also found that no heterostructure is formed in the twinned ZnS NWs since the valence band maximum and conduction band minimum states are distributed along the NW axis uniformly. We suggest that the hexagonal (2H) stacking inside the cubic (3C) stacking has no effect on the electronic properties of thin ZnS NWs.

【Abstract】 The electronic properties of twinned ZnS nanowires (NWs) with different diameters were investigated based on first-principles calculations. The energy band structures, projected density of states and the spatial distributions of the bottom of conduction band and the top of the valence band were presented. The results show that the twinned nanowires exhibit a semiconducting character and the band gap decreases with increasing nanowire diameter due to quantum confinement effects. The valence band maximum and conduction band minimum originate mainly from the S-p and Zn-s orbitals at the core of the nanowires, respectively, which was confirmed by their spatial charge density distribution. We also found that no heterostructure is formed in the twinned ZnS NWs since the valence band maximum and conduction band minimum states are distributed along the NW axis uniformly. We suggest that the hexagonal (2H) stacking inside the cubic (3C) stacking has no effect on the electronic properties of thin ZnS NWs.

【基金】 Project supported by the Special Funds of the National Natural Science Foundation of China (Grant No. 10947102);the Foundation of the Education Committee of Chongqing (Grant No. KJ090503)
  • 【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2011年06期
  • 【分类号】TB383.1;O614.241
  • 【被引频次】2
  • 【下载频次】25
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