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Negative capacitance in doped bi-layer organic light-emitting devices

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【作者】 李诺高歆栋谢作提孙正义丁训民侯晓远

【Author】 Li Nuo,Gao Xin-Dong,Xie Zuo-Ti,Sun Zheng-Yi,Ding Xun-Min,and Hou Xiao-Yuan Surface Physics Laboratory (National Key Laboratory),Fudan University,Shanghai 200433,China

【机构】 Surface Physics Laboratory (National Key Laboratory),Fudan University

【摘要】 This paper reports that the doped bi-layer organic light-emitting devices are fabricated by doping in different regions of the light-emitting layer,the admittance and luminance spectra to characterize the capacitance and luminance of the device are measured.Negative capacitance (NC) appeared at low frequencies when the doped devices are biased with high voltages.The measured phase difference between AC voltage applied across the device and AC current flowing through the device show that the device is inductive when NC appears.

【Abstract】 This paper reports that the doped bi-layer organic light-emitting devices are fabricated by doping in different regions of the light-emitting layer,the admittance and luminance spectra to characterize the capacitance and luminance of the device are measured.Negative capacitance (NC) appeared at low frequencies when the doped devices are biased with high voltages.The measured phase difference between AC voltage applied across the device and AC current flowing through the device show that the device is inductive when NC appears.

【基金】 supported by the Natural Science Foundation of the Shanghai Committee of Science and Technology,China (GrantNo. 08JC1402300)
  • 【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2011年02期
  • 【分类号】TN383
  • 【被引频次】3
  • 【下载频次】23
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