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Effect of oxygen vacancy defect on the magnetic properties of Co-doped ZnO

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【Author】 Weng Zhen-Zhen a)b),Zhang Jian-Min c),Huang Zhi-Gao c),and Lin Wen-Xiong a) a) Fujian Institute of Research on the Structure of Matter,Chinese Academy of Sciences,Fuzhou 350002,China b) College of Physics and Information Engineering,Fuzhou University,Fuzhou 350108,China c) School of Physics and OptoElectronics Technology,Fujian Normal University,Fuzhou 350007,China

【机构】 Fujian Institute of Research on the Structure of Matter,Chinese Academy of Sciences； College of Physics and Information Engineering,Fuzhou University； School of Physics and OptoElectronics Technology,Fujian Normal University；

【摘要】 The influence of oxygen vacancy on the magnetism of Co-doped ZnO has been investigated by the first-principles calculations.It is suggested that oxygen vacancy and its location play crucial roles on the magnetic properties of Co-doped ZnO.The exchange coupling mechanism should account for the magnetism in Co-doped ZnO with oxygen vacancy and the oxygen vacancy is likely to be close to the Co atom.The oxygen vacancy (doping electrons) might be available for carrier mediation but is localized with a certain length and can strengthen the ferromagnetic exchange interaction between Co atoms.更多还原

【Abstract】 The influence of oxygen vacancy on the magnetism of Co-doped ZnO has been investigated by the first-principles calculations.It is suggested that oxygen vacancy and its location play crucial roles on the magnetic properties of Co-doped ZnO.The exchange coupling mechanism should account for the magnetism in Co-doped ZnO with oxygen vacancy and the oxygen vacancy is likely to be close to the Co atom.The oxygen vacancy (doping electrons) might be available for carrier mediation but is localized with a certain length and can strengthen the ferromagnetic exchange interaction between Co atoms.更多还原

【关键词】 Co-doped ZnO； oxygen vacancy； ferromagnetism；
【Key words】 Co-doped ZnO； oxygen vacancy； ferromagnetism；

【基金】 supported by the National Key Project for Basic Research of China (Grant No. 2005CB623605);the Fund of National Engineering Research Center for Optoelectronic Crystalline Materials (Grant No. 2005DC105003);the National Natural Science Foundation of China (Grant No. 60876069)

【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2011年02期

【分类号】O472.5
【被引频次】8
【下载频次】47

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