【摘要】 研究快速热处理对快中子辐照掺氮直拉硅(NCZ-Si)和电子辐照直拉硅(CZ-Si)中氧沉淀和清洁区(DZ)的影响.样品经过不同温度、降温速率和退火气氛快速热处理(RTP)预处理后,再进行高温一步长时间退火,以形成氧沉淀.研究结果表明:对于快中子辐照NCZ-Si,RTP有助于后期退火中DZ的生成,且RTP温度越高,形成的DZ越宽;而高的降温速率会使得DZ宽度变窄;对于电子辐照CZ-Si,在N2气氛下高温RTP更能促进氧沉淀形成,体缺陷(bulk micro defects,BMDS)密度较大.更多还原

【Abstract】 The oxygen precipitation behavior has been investigated in nitrogen-doped Czochralski silicon(NCZ-Si) irradiated by fast-neutron and Czochralski silicon(CZ-Si) irradiated by electron after Rapid Thermal Process(RTP).The samples irradiated by fast-neutron or electron with different dose were treated by post-annealing after RTP pre-annealing at different temperature,cooling rate and ambient.It is found that the RTP process conduces to the denuded zone(DZ) form during the post-annealing treatment in fast-neutron irradiated NCZ-Si wafer.Furthermore,the DZ is getting wider with increasing RTP temperature.On the contrary,the DZ narrowed at high cooling rate.For another thing,the RTP process under N2 ambient in electron irradiated CZ-Si wafer is easy to form the oxygen precipitates and lead to higher density bulk micro-defects(BMDS).更多还原