【摘要】 针对片式正温度系数热敏电阻(PTCR)传感器的还原再氧化制备工艺,研究了还原性气氛下烧结温度对热敏材料性能的影响。结果表明烧结温度在1 215~1 295℃范围内的还原气氛下烧结,瓷体均可半导化,瓷体的平均晶粒尺寸随烧结温度升高而增大,增大趋势由缓慢到逐步加快。再氧化处理前瓷体电阻率均小于10Ω.cm.再氧化后,瓷体的电阻率和升阻比都呈现出了不同程度的增长,增长幅度随烧结温度的升高而降低。此外,提高再氧化温度可提高升阻比同时会使瓷体电阻率增大。更多还原

【Abstract】 The effects of the sintering temperature on properties of PTCR thermistor prepared by reduction-reoxidation process were investigated.The results reveal that the resistivities of ceramics before reoxidation are less than 10 Ω·cm in the range of sintering temperature from 1 215 ℃ to 1 295 ℃,while their grain sizes increase much faster with the increase of sintering temperature.After reoxidation,the resistivities and PTC jumps of ceramics were enhanced,and the increasing amplitudes decrease with the increase of sintering temperature.In addition,the higher reoxidation temperature resulted in larger resistivities and higher PTC jumps.更多还原