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Dy掺杂对ZnSe薄膜微结构的影响
Effect of Dy Doping on Microstructure of ZnSe Thin Films
【摘要】 利用真空蒸发的方法制备ZnSe多晶薄膜,并采用双源法对薄膜进行了Dy的掺杂。用XRD、紫外可见分光光度仪对薄膜的性质进行了表征。结果表明,当Zn、Se原子配比为0.9∶1时可制备较理想的ZnSe多晶薄膜,稀土Dy掺杂并未改变样品的物相结构,但掺杂使薄膜的晶格常数及晶胞体积略有增大,还使得薄膜的晶粒尺寸及压应力变小,掺杂后薄膜的光透射性得到改善。
【Abstract】 ZnSe thin films were prepared by vacuum evaporation on glass substrate.A dysprosium doping was made in the thin films by double-source evaporation.The films were characterized with XRD and UV spectrophotometer.The result showed that the ZnSe thin films were the best when Zn∶Se=0.9∶1.Dy doping improved their optical transmission,did not change the sample’s crystal structure,enhanced their lattice constant and crystal cell volume,and minished its grain size and internal stress.
【关键词】 ZnSe薄膜;
微结构;
真空蒸发;
掺杂;
【Key words】 ZnSe thin films; microstructure; vacuum evaporation; doping;
【Key words】 ZnSe thin films; microstructure; vacuum evaporation; doping;
【基金】 内蒙古教育厅项目(09006)
- 【文献出处】 稀土 ,Chinese Rare Earths , 编辑部邮箱 ,2011年03期
- 【分类号】O484.41
- 【被引频次】3
- 【下载频次】70