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HgS/CdS量子线中电子与声子的相互作用(英文)
Electron and Phonon Interaction in Cylindrical HgS/CdS Quantum Wires System
【摘要】 在有限深势阱模型下,求出了考虑到电子-声子相互作用情况下量子线电子基态能、概率分布和禁带宽度,以HgS/CdS量子线为例,研究了电子-声子相互作用对它们的影响.结果表明:电子-声子相互作用会降低电子基态能,在对基态能的影响中以电子与界面光学支声子相互作用的影响最大,而与界面声学支声子相互作用影响最小;电子-声子相互作用的影响和电子由势阱透入有限高势垒的概率以及禁带宽度均随量子导线半径R的减小而增大;电子-声子相互作用不改变禁带宽度随R的变化趋势,仅使其数值减小.
【Abstract】 A model of cylindrical quantum wires system with one core well,one shell barrier and finite deep potential well is founded.The body phonons,interface phonons,and their couplings with electron are investigated with the help of Green’s function.The equations of electronic energy spectrum and wave function are obtained considering and neglecting the electron-interface interaction,and the correction of the electron ground level,electronic distribution and band gap to the well radius are given.Numerical calculations on a cylindrical HgS/CdS quantum wires system have been performed.The results show that the interaction of electron-interface phonons reduces the ground level and band gap.The smaller radius,the more reduced.Electron-interface optical phonons interaction plays the most influential,electron-interface acoustic phonon interaction impact of the minimum.The electron-interface phonon interaction does not change with changes in the law of the radius,just to change the band gap variation in quantitative.The change increases with the decreases of well radius,which consistent with experimental.
【Key words】 electron-phonon interaction; cylindrical HgS/CdS quantum wires system; electron and hole; band gap; electron ground level;
- 【文献出处】 西南大学学报(自然科学版) ,Journal of Southwest University(Natural Science Edition) , 编辑部邮箱 ,2011年03期
- 【分类号】O471.1
- 【下载频次】63