【摘要】 通过离子注入外延层实现高浓度掺杂和直接采用高掺杂外延层两种方法分别制备了4H-SiC欧姆接触,对应退火条件分别为(950℃,Ar,30 min)和(1000℃,N2,2 min).采用传输线法测试得到的比接触电阻分别为1.359×10-5Ω.cm2和3.44×10-6Ω.cm2.二次离子质谱分析表明,高温退火过程中镍硅化合物和TiC的形成有利于欧姆接触特性.更多还原

【Abstract】 Multi-layer metal Ohmic contacts to 4H-SiC are investigated on the N+ion implanted layer with 950℃ annealing in Ar for 25 minutes and the n type epitaxial layer with a carrier concentration of 1.0×1019cm-3 with 1000℃ annealing in N2 for 2 minutes.The specific contact resistances obtained by the transmission line method(TLM) are 1.359×10-5Ω·cm2 and 3.44×10-6Ω·cm2,respectively.SIMS measurements show that the formation of the Ni silicide and the TiC facilitates to make the contacts become more Ohmic after annealing.更多还原