【摘要】 采用磁控溅射方法在Si片沉积了Ti-50.9at%Ni形状记忆合金薄膜,并将薄膜分别在不同温度下进行退火.利用示差扫描量热方法(DSC)、X射线衍射仪(XRD)、透射电镜(TEM)研究了薄膜退火前后形貌、相变特征及应力随退火温度的变化.实验结果表明:溅射态薄膜为非晶态,其晶化温度范围为430℃—535℃,晶化同时伴随着Ti3Ni4相的析出;退火后的薄膜随着退火温度的升高,Rs、Af、Ms均呈上升趋势.薄膜的残余应力随着退火温度的增加而逐渐减少.更多还原

【Abstract】 The Ti-50.9at% Ni shape memory alloy thin flms are deposited on pure Si substrate by DC-magnetron sputtering.The films were then annealed at different temperatures for 30 min.The effect of annealing temperature on the microstructure,transformation behavior and residual stress of the films was characterized by differential scanning calorimeter,X-ray diffraction and transmission electron microscopy.The results show that the deposited films were amorphous and range of crystallization temperature was 430℃-535℃ with appearance of the precipitate phase(Ni4Ti3).As the annealing temperature increased,all of the Rs,Af and Ms increased as well while the residual stress is gradually decreased.更多还原