【摘要】 本文从FPGA器件内部最基本的CMOS单元出发,分析了器件功能失效时反相器输出波形随累积剂量的变化关系,进而研究AlteraSRAM型FPGA器件⁶⁰Coγ射线辐照后的总剂量辐射损伤效应.实验结果表明:由于场氧漏电和结构漏电的影响,随着累积剂量的增加输出波形发生畸变,峰峰值变为原来的十分之一左右,但输出波形还有相对的高低电平;同时,输出高电平不能保持原有的状态,迅速地向低电平转换,并且转换速度随着累积剂量的增加而加快,输出低电平相对初始值有一定程度抬高;由于栅氧厚度变薄,输出波形的上升时间、下降时间和延迟时间随累积剂量的变化很小.更多还原

【Abstract】 In order to investigate the total-dose irradiation effects of Altera static random access memory (SRAM)-based FPGA (field programmable gate array),the irradiation response of basic cell of FPGA,i. e. the CMOS,is studied,and the relationship of the output waveform as a function of total dose has been obtained. It indicates that the output waveforms become aberrated and the peak-peak value turns to about 1 /10 of the initial value as the total dose increased,resulting from the degradation of leakage current both from field oxygen and the structure; but there are relatively high and low levels left in the output waveforms. Meanwhile,the high level cant keep the already existing state and changes to the low level,and the conversion speed is accelerated with the increase of the total dose. The low level becomes larger than the initial value. As the gate-oxygen is quite thin,the rise time,fall time,and delay of the output waveforms change little with the total dose.更多还原