【摘要】 针对硅材料和硅基器件辐照损伤机理之间存在的矛盾,采用对单结晶体管基区电阻实时监测的方法,得到单结晶体管基区阻值随γ射线辐照剂量的增加先减小后增大的规律.结合国内外硅材料和器件的辐照理论,从γ射线与物质的微观作用分析,提出单结晶体管基区主要的γ射线辐照机制位移效应较电离效应具有一定滞后性的观点,解决了原有矛盾,对器件加固的研究具有重要意义.更多还原

【Abstract】 The change of base resistance in Si-UJT under irradiation of ⁶⁰Co γ-ray is provided. Through multipoint measurement and real-time monitoring,it was shown that the base resistance decreased immediately and then increased slowly. Compared with domestic and foreign related research results,this proves that the displacement effect is the main effect of base resistance in Si-UJT irradiated by ⁶⁰Co γ-ray,but it lags behind the ionization effect from microanalysis of the interaction between γ-ray and Si material. This is very important for the radiation hardened research.更多还原