【摘要】 报道了在V型槽图形衬底上利用分子束外延技术外延生长的GaAs/AlGaAs量子线.外延截面在扫描电子显微镜下可以看到在V型槽底部形成了弯月型量子线结构,量子线尺寸约为底边60nm高14nm的近三角形.低温87K下光致发光谱测试在793.7和799.5nm处出现峰值,验证了量子线的存在.理论近似计算结果显示,相比等宽度量子阱有8meV的蓝移正是由于横向量子限制引起的.更多还原

【Abstract】 GaAs /AlGaAs quantum wires grown by molecular beam epitaxy on a V-groove patterned substrate was described. The cross section of scan electron microscopy (SEM) image shows that crescent-type quantum wire were formed at the V groove bottom,which is a triangle of about 60 nm in width and 14 nm in height. Two peaks at 793. 7 nm and 799. 5 nm of photoluminescence spectrum at 87 K verified the existence of quantum wires. Theoretical calculation gives 8 meV blue shift,which is proved to be casued by lateral confinement compared with quantum well of the same width.更多还原