【摘要】 金属辅助化学腐蚀法可以在无外加电路的条件下,在40%HF/30%H2O2/乙醇的混合溶液中完成多孔硅的制备,该方法简单快速。本文研究了金属辅助法腐蚀液体系各组分(HF、H2O2、乙醇)含量对多孔硅表面的SiHx成分和多孔层结构的影响,根据Si-H和Si-O的红外吸收峰强度的变化曲线优化了腐蚀液体系中各组分含量。在腐蚀液各组分体积比为V40%HF∶V30%H2O2∶V乙醇=2∶2∶1和腐蚀时间为4 min的条件下制备了形貌均匀、化学活性(SiHx成分)和多孔结构稳定性较好的多孔硅,并对金属辅助法与阳极蚀刻法制得的两种多孔硅进行比较,结果显示金属辅助法制备的多孔硅的化学活性和稳定性在后续的生物技术应用中具有明显的优越性。更多还原

【Abstract】 A simple and non-electrode etching method,metal-assisted chemical etching,was used to prepare porous silicon.In this report,we investigated the influence of a series of concentrations of HF,H2O2 and EtOH in surface SiHx species and the structure of porous layer.According to the curve of infrared absorption intensity of Si-H and Si-O against concentration of individual etchant component,we optimized the etching conditions for preparing porous silicon with uniform morphology,surface chemical reactivity,and good stability.The surface SiHx species on porous silicon prepared with a 2∶2∶1(V/V/V) 40%HF/30%H2O2/ethanol etchant for 4 min was compared with that prepared with anodic etching(electrochemical etching).The results showed that porous silicon prepared with metal-assisted chemical etching is of much preponderance in further applications such as biotechnology.更多还原