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玻璃衬底和硅衬底沉积TZO透明导电薄膜的对比研究

PHOTO-ELECTRONIC PROPERTIES OF ZnO∶Ti FILMS DEPOSITED ON Si AND GLASS SUBSTRATES

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【作者】 刘汉法张化福袁玉珍袁长坤类成新

【Author】 Liu Hanfa,Zhang Huafu,Yuan Yuzhen,Yuan Changkun,Lei Chengxin(School of Science,Shandong University of Technology,Zibo 255049,China)

【机构】 山东理工大学理学院

【摘要】 利用直流磁控溅射法在室温水冷玻璃衬底和硅片衬底上制备出掺钛氧化锌(ZnO∶Ti)透明导电薄膜。SEM和XRD研究结果表明,两种衬底上的ZnO∶Ti薄膜均为为六角纤锌矿结构的多晶薄膜,且具有c轴择优取向。讨论了衬底对掺钛氧化锌透明导电薄膜光学、电学性能的影响。当玻璃衬底薄膜厚度为568nm时,薄膜电阻率达到最小值1.64×10-4Ω.cm,硅衬底上薄膜厚度为641nm时有最小电阻率2.69×10-4Ω.cm。两种衬底所制备薄膜都具有良好的附着性能,玻璃衬底薄膜样品在波长为500~800nm的可见光中平均透过率都超过了91%,硅衬底上薄膜样品的折射率约为2.05,ZnO∶Ti薄膜可以用作薄膜太阳电池的透明电极。

【Abstract】 Transparent conductive Titanium-doped zinc oxide films with high transparency and relatively low resistivity was successfully prepared on water-cooled Si and glass substrates by DC magnetron sputtering at room temperature.Micro-structural,morphological and photo-electrical properties of ZnO∶Ti films were investigated by SEM and XRD.Experimental results show that all the deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrates along the c-axis.The fimes prepared on glass or on Si substrate have the same orderliness dependence of the electrical resistivity on the thickness of ZnO:Ti films.When the film thickness on glass sabstrate is 568nm,the lowest resistivity of 1.64×10-4Ω·cm is obtained.All the films present a high transmittance of above 91% in the visible range.ZnO∶Ti films with high transparency and relatively low resistivity deposited on glass substrates at room temperature will be used as transparent electrode in thin film solar cells and liquid crystal displays.

【基金】 山东省自然科学基金(ZR2209GL015)
  • 【文献出处】 太阳能学报 ,Acta Energiae Solaris Sinica , 编辑部邮箱 ,2011年04期
  • 【分类号】TN304.2
  • 【被引频次】7
  • 【下载频次】234
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