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BiⅣ离子5d Rydberg态能级的最弱受约束电子势模型理论计算
Calculations of the 5d Rydberg energy levels for BiⅣusing the weakest bound electron potential model theory
【摘要】 根据最弱受约束电子势模型的理论,在考虑外能级干扰的情况下,计算了BiⅣ离子的5d106s2→5d96s2np(n=6~20)和5d106s2→5d96s2nf(n=5~20)系列中的6个Rydberg态的系列能级,理论计算值与实验值吻合较好,并且预言了一些实验中尚未观测到的能级值.
【Abstract】 Based on the weakest bound electron potential model(WBEPM) theory,six series energy levels of the Rydberg series 5d106s2→5d9 6s2np(n = 6~20) and 5d106s2→5d96s2nf(n = 5~20) of BiⅣions are calculated by means of the method,and the foreign level perturbation corrections are taken into account in calculations.The calculated values are in good agreement with the experimental results,and some energies without experimental values are predicted.
【关键词】 最弱受约束电子势模型;
BiⅣ离子;
量子数亏损;
Rydberg态;
能级;
【Key words】 WBEPM; Bi IV ions; quantum defect; Rydberg states; energy levels;
【Key words】 WBEPM; Bi IV ions; quantum defect; Rydberg states; energy levels;
【基金】 陕西省教育厅专项科研基金(08JK343);西安建筑科技大学基础研究基金(JC0724)
- 【文献出处】 四川大学学报(自然科学版) ,Journal of Sichuan University(Natural Science Edition) , 编辑部邮箱 ,2011年06期
- 【分类号】O562.1
- 【下载频次】14