【摘要】 利用电子束沉积技术在玻璃衬底上制备了IWO(In2O3∶WO3)薄膜和SiO2缓冲层,并将SiO2缓冲层对IWO薄膜性能的影响作了探究。SiO2缓冲层在室温生长。SIMS测试表明:SiO2缓冲层能有效阻挡浮法玻璃中的杂质进入到IWO薄膜。实验获得的具有SiO2阻挡层的IWO薄膜的电子迁移率μ～54.5 cm.2V-.1s-1,电阻率ρ～5.86×10-4Ω.cm,电子载流子浓度n～1.95×1020 cm-3,400～1600 nm光谱区域内的平均透过率～76%。更多还原

【Abstract】 The IWO(In2O3∶WO3) thin films and SiO2 buffer layers were fabricated by electron beam deposition technique on glass substrates,the effects of SiO2 buffer layer on the properties of IWO thin films were investigated.SiO2 buffer layers were deposited at room temperature.The SIMS test showed that SiO2 buffer layer can play an important role,which blocks the impurities diffusion from the glass substrate.The highest mobility μ~54.5 cm2 · V-1·s-1 of IWO thin film was obtained at the thickness of SiO2 about 20 nm,with the resistivity ρ~5.86×10-4 Ω· cm and the carrier concentration n~1.95×1020 cm-3.The optimizing transmittance of IWO films was ~76%(including float glass,i.e.glass/SiO2/IWO) at the light wavelength between 400 to 1600 nm.更多还原